Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen

Jin Heong Yim; Young Kwon Park; Jong Ki Jeon

doi:10.4028/www.scientific.net/SSP.124-126.185

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Electrical/Mechanical Properties of Porous Low-k...

Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen

Abstract:

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.

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Solid State Phenomena (Volumes 124-126)

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185-188

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https://doi.org/10.4028/www.scientific.net/SSP.124-126.185

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Online since:

June 2007

Authors:

Jin Heong Yim, Young Kwon Park, Jong Ki Jeon

Keywords:

Cyclodextrin, Low-K, Nanoporous, Thin Film

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