A Study on Germanium as a Contaminant Source in Semiconductor Fabrication Process

Dong Won Hwang; Jae Seok Lee; Pil Kwon Jun; Yang Ku Lee; Seung Ki Chae

doi:10.4028/www.scientific.net/SSP.134.255

Paper Titles

Effect of Ozone Supply Methods on PRE in Alkaline Ozone Solutions
p.237

Challenges of Single-Wafer Wet Cleaning for Low Temperature Pre-Epitaxial Treatment of SiGe
p.243

Estimation of Detrimental Impact of New Metal Candidates in Advanced Microelectronics
p.247

Plastic Containers Contamination by Volatile Acids : Accumulation, Release and Transfer to Cu-Surfaces during Wafers Storage
p.251

A Study on Germanium as a Contaminant Source in Semiconductor Fabrication Process
p.255

Implementation of a System for Metal Contamination Control Based on Classification Criteria
p.259

Study of Static Electricity in Wafer Cleaning Process
p.263

Mapping of Metallic Contamination Using TXRF
p.269

Investigation of Metallic Contamination Analysis Using Vapor Phase Decomposition – Droplet Collection – Total Reflection X-Ray Fluorescence (VPD-DC-TXRF) for Pt-Group Elements on Silicon Wafers
p.273

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A Study on Germanium as a Contaminant Source in Semiconductor Fabrication Process

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Solid State Phenomena (Volume 134)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.255

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Online since:

November 2007

Authors:

Dong Won Hwang, Jae Seok Lee, Pil Kwon Jun, Yang Ku Lee, Seung Ki Chae

Keywords:

Cross-Contamination, Gate Oxide Integrity, Semiconductor Fabrication, Silicon-Germanium (SiGe)

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