Surface States and Recombination Loss on Wet-Chemically Passivated Si Studied by Surface Photovoltage (SPV) and Photoluminescence (PL)

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Periodical:

Solid State Phenomena (Volume 134)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

41-44

DOI:

10.4028/www.scientific.net/SSP.134.41

Citation:

H. Angermann and J. Rappich, "Surface States and Recombination Loss on Wet-Chemically Passivated Si Studied by Surface Photovoltage (SPV) and Photoluminescence (PL)", Solid State Phenomena, Vol. 134, pp. 41-44, 2008

Online since:

November 2007

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$35.00

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