Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O3/TEOS CVD

Seung Cheol Lee; Choon Kun Ryu; Sang Wook Park; Gyu An Jin; Sang Deok Kim; Ki Hong Yang; Sang Hyon Kwak; Su Hyun Lim; Young Jun Kim; Sun Mi Park; Chul Sik Jang; Sung Ki Park

doi:10.4028/www.scientific.net/SSP.134.57

Paper Titles

Surface States and Recombination Loss on Wet-Chemically Passivated Si Studied by Surface Photovoltage (SPV) and Photoluminescence (PL)
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Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer
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Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O₃/TEOS CVD
p.57

Etch Rate Profile Characterization of High-κ Materials
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HomeSolid State PhenomenaSolid State Phenomena Vol. 134Effect of SC-1 Treatment in Thermal Wall Oxide on...

Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O₃/TEOS CVD

Abstract:

The SC-1 treatment prior to the O3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the SC-1 cleaning was a critical parameter for the contact angle and the gapfill performance of the O3/TEOS CVD.

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

57-60

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.57

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Online since:

November 2007

Authors:

Seung Cheol Lee, Choon Kun Ryu, Sang Wook Park, Gyu An Jin, Sang Deok Kim, Ki Hong Yang, Sang Hyon Kwak, Su Hyun Lim, Young Jun Kim, Sun Mi Park, Chul Sik Jang, Sung Ki Park

Keywords:

Cleaning, O₃/TEOS, SC-1, STI Gap-Filling

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References

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