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HomeSolid State PhenomenaSolid State Phenomena Vol. 134Development of a New TaN Etchant for Metal Gate

Development of a New TaN Etchant for Metal Gate

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

75-78

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.75

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Online since:

November 2007

Authors:

Mong Sup Lee, Sang Yong Kim, Ji Hoon Cha, Jeong Nam Han, Im Soo Park, Kuntack Lee, Chang Ki Hong, Han Ku Cho, Joo Tae Moon

Keywords:

High-k Layer, Metal Gate, TaN, Wet Etching Processes

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

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[2] Z. Zhang, S. C. Song, C. Huffman, M. M. Hussain, J. Barnett, N. Moumen, H. N. Alshareef, P. Majhi, J. H. Shim, S. H. Bae, B. H. Lee: Electrochem. Solid-State Lett., 8 (10) (2005), p. G271.

DOI: 10.1149/1.2030447

[3] M. M. Hussain, N. Moumen, Z. Zhang, Baxter F. Womack: J. Electrochem. Soc., 153 (G) (2006), p. G389.

[4] M. Pourbaix: Atlas of Electrochemical Equilibrica in Aqueous Solutions (Pergamon Press), p.253.