Paper Titles

Development of a New TaN Etchant for Metal Gate
p.75

Peracetic Acid as Active Species in Mixtures for Selective Etching of SiGe/Si Layer Systems – Aspects of Chemistry and Analytics
p.79

A Wet Etching Technique to Reveal Threading Dislocations in Thin Germanium Layers
p.83

Galvanic Corrosion of Stacked Metal Gate Electrodes during Cleaning in HF Solutions
p.87

The Dynamic Aspects of Electrochemical Reaction Cells in Selectively Inducing Defects on Silicon Surface
p.91

Wafer Cleaning Using Supercritical CO₂ in Semiconductor and Nanoelectronic Device Fabrication
p.97

All-Wet Stripping of FEOL Photoresist Using Mixtures of Sulphuric Acid
p.105

All Wet Stripping of Implanted Photoresist
p.109

Study of a Metal Gate and Silicon Selective “Dry Ash Only” Process for Combined Extension and Halo Implanted Photo Resist
p.113

HomeSolid State PhenomenaSolid State Phenomena Vol. 134The Dynamic Aspects of Electrochemical Reaction...

The Dynamic Aspects of Electrochemical Reaction Cells in Selectively Inducing Defects on Silicon Surface

Article Preview

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces VIII

Info:

Periodical:

Solid State Phenomena (Volume 134)

Pages:

91-94

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.91

Citation:

Cite this paper

Online since:

November 2007

Authors:

Lie Yi Sheng, Johan De Greve, Eddy De Backer, Philippe Verpoort, Jan Ackaert, Filip Bauwens

Keywords:

Built-In Potential, Corrosion Current, Electrochemical Cell, Failure Patterns, Gate Oxide Integrity, Reaction Dynamics, Spray Cleaning, Surface Potential, Surface Transport, Well Junction

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2008 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: