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Etch Rate Profile Characterization of High-κ Materials

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

63-66

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.63

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Online since:

November 2007

Authors:

Annamaria Votta, Enrico Bellandi, Rosella Piagge, Massimo Caniatti, Francesco Pipia, Mauro Alessandri

Keywords:

Aluminum (Al), Etch Rate Profiles, Hafnia, Hafnium Aluminates, High-k Materials

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] M. Alessandri, R. Piagge et al. High-k materials in flash memories, 208th meeting of The Electrochemical Society, Los Angeles, CA, October 16-21, (2005).

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[2] E. Bellandi, B. Crivelli and M. Alessandri, Behavior of high-k dielectric materials with classical cleaning chemistries, UCPSS 2002, Oostende, Belgium.

DOI: 10.4028/www.scientific.net/ssp.92.15

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[3] E. Bellandi, A. Elbaz and M. Alessandri Etch rate depth profiling by single wafer etching equipment, UCPSS 2004, Bruxelles, Belgium.

DOI: 10.4028/www.scientific.net/ssp.103-104.107

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