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HomeSolid State PhenomenaSolid State Phenomena Vol. 134Surface Preparation Challenge on Nitrided Gate...

Surface Preparation Challenge on Nitrided Gate Oxides

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

71-74

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.71

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Online since:

November 2007

Authors:

Philippe Garnier, David Barge, Jerome Bienacel, Brice Tavel, Nicolas Cabuil, Didier Lévy, Kathy Barla

Keywords:

Nitrided Oxide, Nitrogen Concentration Profile, Triple Gate Oxide

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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[1] M. Denais, New Hole Trapping Characterization during NBTI in 65nm Node Technology with distinct nitridation processing, Integrated Reliability Workshop proceedings, pp.121-124, (2004).

DOI: 10.1109/irws.2004.1422753

[2] M. Denais, On-the-fly characterization of NBTI in ultra-thin gate-oxide PMOSFET's, International Electron Device Meeting Technical Digest, pp.109-112, (2004).

[3] J. Bienacel, ECS Proceedings Volume 2005-01 p.223, Effect of Post Nitridation Anneal on Physical Properties of Plasma Nitrided Oxides.

DOI: 10.1149/ma2005-01/9/411