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HomeSolid State PhenomenaSolid State Phenomena Vol. 134Single-Wafer Wet Chemical Oxide Formation for...

Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer

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Ultra Clean Processing of Semiconductor Surfaces VIII

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Solid State Phenomena (Volume 134)

Pages:

53-56

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.53

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Online since:

November 2007

Authors:

Kenichi Sano, Akira Izumi, Atsuro Eitoku, James Snow, L. Nyns, S. Kubicek, R. Singanamalla, O. Richard, Thierry Conard, Rita Vos, Paul W. Mertens

Keywords:

Atomic Layer Deposition ALD, High-k, Interface, Oxide, Ozone, Si<110>, Single Wafer Cleaning

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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