Design and Development of Novel Remover for Cu/Porous Low-k Interconnects

Tomoko Suzuki; Atsushi Otake; Tomoko Aoki

doi:10.4028/www.scientific.net/SSP.145-146.315

Paper Titles

Stripping of Ion Implanted Photoresist by CO₂ Cryogenic Pre-Treatment Followed by Wet Cleaning
p.289

Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"
p.295

Photoresist Removal Using Alternative Chemistries and Pressures
p.303

Ozone Chemistry for BEOL Resist Stripping – A Systematic Analytical Attempt to Understand the Interaction of O₃ with Modern DUV-Resists
p.311

Design and Development of Novel Remover for Cu/Porous Low-k Interconnects
p.315

Surface Energy and Wetting Behaviour of Plasma Etched Porous SiCOH Surfaces and Plasma Etch Residue Cleaning Solutions
p.319

Modification of Photoresist by UV for Post-Etch Wet Strip Applications
p.323

Recyclable Fluorine-Based Cleaning Solvents for Resist Removal
p.327

Cu Dendrite Formation in Post Trench Etch Cleaning
p.331

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Design and Development of Novel Remover for Cu/Porous Low-k Interconnects

Abstract:

At 32nm and below the integration of extreme low-k dielectrics (ELK) with a permittivity of 2.2 or lower will require considerable process optimization at etch and clean to maintain critical dimension (CD) and effective k. Of equal concern is the impact on yield and reliability of lateral Cu etch or incomplete removal of copper oxides (CuOx) during post etch residue (PER) cleaning. These are not new issues but the challenges of solving them in the presence of ELK’s are considerable not least in relation to the question of selectivity towards “damaged low k” interfaces, often described as densified or C depleted layers.