Design and Development of Novel Remover for Cu/Porous Low-k Interconnects

Abstract:

Article Preview

At 32nm and below the integration of extreme low-k dielectrics (ELK) with a permittivity of 2.2 or lower will require considerable process optimization at etch and clean to maintain critical dimension (CD) and effective k. Of equal concern is the impact on yield and reliability of lateral Cu etch or incomplete removal of copper oxides (CuOx) during post etch residue (PER) cleaning. These are not new issues but the challenges of solving them in the presence of ELK’s are considerable not least in relation to the question of selectivity towards “damaged low k” interfaces, often described as densified or C depleted layers.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

315-318

DOI:

10.4028/www.scientific.net/SSP.145-146.315

Citation:

T. Suzuki et al., "Design and Development of Novel Remover for Cu/Porous Low-k Interconnects ", Solid State Phenomena, Vols. 145-146, pp. 315-318, 2009

Online since:

January 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.