Modification of Photoresist by UV for Post-Etch Wet Strip Applications

Quoc Toan Le; Els Kesters; L. Prager; Martine Claes; Marcel Lux; Guy Vereecke

doi:10.4028/www.scientific.net/SSP.145-146.323

Paper Titles

Photoresist Removal Using Alternative Chemistries and Pressures
p.303

Ozone Chemistry for BEOL Resist Stripping – A Systematic Analytical Attempt to Understand the Interaction of O₃ with Modern DUV-Resists
p.311

Design and Development of Novel Remover for Cu/Porous Low-k Interconnects
p.315

Surface Energy and Wetting Behaviour of Plasma Etched Porous SiCOH Surfaces and Plasma Etch Residue Cleaning Solutions
p.319

Modification of Photoresist by UV for Post-Etch Wet Strip Applications
p.323

Recyclable Fluorine-Based Cleaning Solvents for Resist Removal
p.327

Cu Dendrite Formation in Post Trench Etch Cleaning
p.331

The Interaction of Sublimed Iminodiacetic Acid with a Cu{110} Surface
p.335

Advances in Test Wafer Reclaim Technology – Wet Stripping Porous Low-k Films with No Substrate Damage
p.339

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Modification of Photoresist by UV for Post-Etch Wet Strip Applications

Abstract:

In Back-End-of-Line processing, the remaining photoresist layer after plasma etch is traditionally removed using a plasma process. Plasma process was reported to induce damage to porous dielectric [1-3]. To minimize damage to low-k material, wet alternative methods of removal of photoresist layer on porous low-k dielectrics are gaining a renewed interest [4]. However, the presence of a “crust” generated by etch plasma at the photoresist surface makes it impossible to completely remove by a pure organic solvent. Indeed, the crust, most likely composed of crosslinked polymer, is not soluble in organic solvents [5]. For this reason, a UV pre-treatment is investigated to break cross-links in the crust or to modify the crust to enhance removal efficiency with solvent stripping in more advanced generations.