Cu Dendrite Formation in Post Trench Etch Cleaning

Jung Shik Heo; Jun Hwan Oh; Hong Jae Shin; Nae In Lee

doi:10.4028/www.scientific.net/SSP.145-146.331

Paper Titles

Design and Development of Novel Remover for Cu/Porous Low-k Interconnects
p.315

Surface Energy and Wetting Behaviour of Plasma Etched Porous SiCOH Surfaces and Plasma Etch Residue Cleaning Solutions
p.319

Modification of Photoresist by UV for Post-Etch Wet Strip Applications
p.323

Recyclable Fluorine-Based Cleaning Solvents for Resist Removal
p.327

Cu Dendrite Formation in Post Trench Etch Cleaning
p.331

The Interaction of Sublimed Iminodiacetic Acid with a Cu{110} Surface
p.335

Advances in Test Wafer Reclaim Technology – Wet Stripping Porous Low-k Films with No Substrate Damage
p.339

Electrochemical Behavior of Cobalt in Post-Via Etch Cleaning Solutions
p.343

Characterization of Post Etch Residues Depending on Resist Removal Processes after Aluminum Etch
p.349

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Cu Dendrite Formation in Post Trench Etch Cleaning

Cu Dendrite Formation in Post Trench Etch Cleaning

Abstract:

Copper has been widely used as the interconnect material for integrated circuits because of the good electrical conductivity and electron migration resistance. Copper dual damascene structure has been adapted due to the impossibility of etching the copper. For via first dual damascene (VFDD) integration, via is opened after trench etch. Generally, diluted HF cleaning after trench etch is used to remove both etch residues and carbon depletion layer of low-k material. In this study, we investigated the characteristics of copper dendritic formation occurred in post trench etch cleaning with single wafer spin tool (SWST).