Characterization of Post Etch Residues Depending on Resist Removal Processes after Aluminum Etch

Abstract:

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The subject of this report is the characterization of plasma etch residues after a metal etch process with Cl2/BCl3 etch gases. One of the interactive factors in the removability of the residues is the photo-mask removal process (DSQ). Depending on the DSQ process the molecular structure of the residues will differ. For our findings, we used laser spectroscopy and Fourier-transformed infrared spectroscopy to obtain information about the degree of the cross-linking of the molecular structure of residues in a post-metal etch cleaning process. The post-etch cleaning is important for removing residues remaining after the metal structuring process. The main goal is to use emission spectroscopy for studying the compounds of the dry-etch related residues. Finally, it was shown that small variations in wafer treatment directly after dry-etching results in different solubilities of residues in HDA (hydroxylamine) based solutions. [1]

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

349-352

DOI:

10.4028/www.scientific.net/SSP.145-146.349

Citation:

M. Heidenblut et al., "Characterization of Post Etch Residues Depending on Resist Removal Processes after Aluminum Etch", Solid State Phenomena, Vols. 145-146, pp. 349-352, 2009

Online since:

January 2009

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Price:

$35.00

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