Characterization of Post Etch Residues Depending on Resist Removal Processes after Aluminum Etch

Abstract:

The subject of this report is the characterization of plasma etch residues after a metal etch process with Cl2/BCl3 etch gases. One of the interactive factors in the removability of the residues is the photo-mask removal process (DSQ). Depending on the DSQ process the molecular structure of the residues will differ. For our findings, we used laser spectroscopy and Fourier-transformed infrared spectroscopy to obtain information about the degree of the cross-linking of the molecular structure of residues in a post-metal etch cleaning process. The post-etch cleaning is important for removing residues remaining after the metal structuring process. The main goal is to use emission spectroscopy for studying the compounds of the dry-etch related residues. Finally, it was shown that small variations in wafer treatment directly after dry-etching results in different solubilities of residues in HDA (hydroxylamine) based solutions. [1]

• Periodical: Solid State Phenomena (Volumes 145-146)
• Pages: 349-352
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.145-146.349
• Online since: January 2009
• Authors: Maria Heidenblut, D. Sturm, Alfred Lechner, Franz Faupel
• Keywords: FT-IR Microscopy, Post-Etch Residues, Raman Microscopy

References

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