The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection

Han Chul Cho; Young Min Kim; Hyun Seop Lee; Suk Bae Joo; Hae Do Jeong

doi:10.4028/www.scientific.net/SSP.145-146.367

Paper Titles

Characterization of Post Etch Residues Depending on Resist Removal Processes after Aluminum Etch
p.349

Impact of Dry Etch and Ash Conditions on Removability of Plasma Etch Residues in Al-Metallization. Approach to Improve PER Cleaning Efficiency by EHS-Friendly Aqueous Remover
p.353

Borderless via Clean Study for Minimizing Al-Cu Loss in 58nm Flash Devices
p.357

Effect of Various Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post Copper CMP Cleaning Process
p.363

The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection
p.367

Cu Surface Characterization after Wet Cleaning Processes
p.371

Impact of CMP Polish and pCMP Cleaning on Adhesion of SiCN Capping Layer on PECVD-Derived Porous OSG and Copper
p.377

Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects
p.381

Process Dependence on Defectivity Count on Copper and Dielectric Surfaces in Post-Copper CMP Cleaning
p.385

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The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection

Abstract:

Cu (copper) has been widely used for interconnection structure in integrated circuits because of its properties such as a low resistivity and high resistance to electromigration when compared with aluminum [1, 2]. Damascene process for the interconnection structure utilizes 2-steps CMP (chemical mechanical polishing). After 2-steps CMP process, many abrasive particles leave on the wafer surface, which should be removed in post-Cu CMP cleaning process. Cleaning efficiency affects directly on the subsequent process and device yield [3]. Therefore, cleaning of abrasive particles is the critical issue in semiconductor manufacturing.