The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection

Abstract:

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Cu (copper) has been widely used for interconnection structure in integrated circuits because of its properties such as a low resistivity and high resistance to electromigration when compared with aluminum [1, 2]. Damascene process for the interconnection structure utilizes 2-steps CMP (chemical mechanical polishing). After 2-steps CMP process, many abrasive particles leave on the wafer surface, which should be removed in post-Cu CMP cleaning process. Cleaning efficiency affects directly on the subsequent process and device yield [3]. Therefore, cleaning of abrasive particles is the critical issue in semiconductor manufacturing.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

367-370

DOI:

10.4028/www.scientific.net/SSP.145-146.367

Citation:

H. C. Cho et al., "The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection", Solid State Phenomena, Vols. 145-146, pp. 367-370, 2009

Online since:

January 2009

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Price:

$35.00

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