The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection
Cu (copper) has been widely used for interconnection structure in integrated circuits because of its properties such as a low resistivity and high resistance to electromigration when compared with aluminum [1, 2]. Damascene process for the interconnection structure utilizes 2-steps CMP (chemical mechanical polishing). After 2-steps CMP process, many abrasive particles leave on the wafer surface, which should be removed in post-Cu CMP cleaning process. Cleaning efficiency affects directly on the subsequent process and device yield . Therefore, cleaning of abrasive particles is the critical issue in semiconductor manufacturing.
Paul Mertens, Marc Meuris and Marc Heyns
H. C. Cho et al., "The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection", Solid State Phenomena, Vols. 145-146, pp. 367-370, 2009