Process Dependence on Defectivity Count on Copper and Dielectric Surfaces in Post-Copper CMP Cleaning

Jerome Daviot; Jan Vaes

doi:10.4028/www.scientific.net/SSP.145-146.385

Paper Titles

Impact of Dry Etch and Ash Conditions on Removability of Plasma Etch Residues in Al-Metallization. Approach to Improve PER Cleaning Efficiency by EHS-Friendly Aqueous Remover
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Borderless via Clean Study for Minimizing Al-Cu Loss in 58nm Flash Devices
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Effect of Various Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post Copper CMP Cleaning Process
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The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection
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Cu Surface Characterization after Wet Cleaning Processes
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Impact of CMP Polish and pCMP Cleaning on Adhesion of SiCN Capping Layer on PECVD-Derived Porous OSG and Copper
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Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects
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Process Dependence on Defectivity Count on Copper and Dielectric Surfaces in Post-Copper CMP Cleaning
p.385

A Novel Copper Interconnection Cleaning by Atomic Hydrogen Using Diluted Hydrogen Gas
p.389

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Process Dependence on Defectivity Count on Copper and Dielectric Surfaces in Post-Copper CMP Cleaning

Abstract:

At critical dimensions of 65nm and lower, the tolerances for yield impacting “killer” particle defects become ever tighter and this is especially true for Cu PCMP cleaning. This is a critical step in reducing wafer defectivity and metal contamination directly impacting yield and reliability. A successful candidate must exhibit a number of additional attributes not least of which are compatibility to Cu while selectively removing copper oxides (CuOx), and be fully compatible with porous ULK and barrier materials. Conventionally PCMP cleans typically require two different acidic or alkaline solutions containing a surfactant to drive particle removal and surface metal preparation; however this is not without its limitations e.g. crack propagation, water absorption, low-k wetting, water marks and galvanic corrosion. It would be advantageous if Cu PCMP could be performed with a single neutral pH cleaning solution. The paper will present results of work conducted on a neutral, single step Cu Post CMP (PCMP) cleaning solution, EKC PCMP5510™, and will discuss the influences of different process parameters in optimising defect removal from Cu and Ultra Low-K (ULK) dielectric surfaces (K=2.5) thus highlighting the fundamental differences in cleaning either surface.