Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects

Xun Gu; Takenao Nemoto; Akinobu Teramoto; Rui Hasebe; Takashi Ito; Tadahiro Ohmi

doi:10.4028/www.scientific.net/SSP.145-146.381

Paper Titles

Impact of Dry Etch and Ash Conditions on Removability of Plasma Etch Residues in Al-Metallization. Approach to Improve PER Cleaning Efficiency by EHS-Friendly Aqueous Remover
p.353

Borderless via Clean Study for Minimizing Al-Cu Loss in 58nm Flash Devices
p.357

Effect of Various Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post Copper CMP Cleaning Process
p.363

The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection
p.367

Cu Surface Characterization after Wet Cleaning Processes
p.371

Impact of CMP Polish and pCMP Cleaning on Adhesion of SiCN Capping Layer on PECVD-Derived Porous OSG and Copper
p.377

Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects
p.381

Process Dependence on Defectivity Count on Copper and Dielectric Surfaces in Post-Copper CMP Cleaning
p.385

A Novel Copper Interconnection Cleaning by Atomic Hydrogen Using Diluted Hydrogen Gas
p.389

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Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects

Abstract:

As technology node progressing, ultra low-k film has been implemented to reduce RC delay in LSI circuit. A fluorocarbon (CFx) film is proposed as foreground ultra low-k film because of non-porous structure [1]. Although CFx film is expected to be stable for its structure advantage, damage-less process is anticipated to avoid dielectric constants change in subsequence process steps [2]. CMP and post CMP process are concerned to bring damage on devices, so the effect of post CMP cleaning solutions on CFx structure and electric property is evaluated.