Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects

Abstract:

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As technology node progressing, ultra low-k film has been implemented to reduce RC delay in LSI circuit. A fluorocarbon (CFx) film is proposed as foreground ultra low-k film because of non-porous structure [1]. Although CFx film is expected to be stable for its structure advantage, damage-less process is anticipated to avoid dielectric constants change in subsequence process steps [2]. CMP and post CMP process are concerned to bring damage on devices, so the effect of post CMP cleaning solutions on CFx structure and electric property is evaluated.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

381-384

DOI:

10.4028/www.scientific.net/SSP.145-146.381

Citation:

X. Gu et al., "Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects ", Solid State Phenomena, Vols. 145-146, pp. 381-384, 2009

Online since:

January 2009

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Price:

$35.00

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