Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects
As technology node progressing, ultra low-k film has been implemented to reduce RC delay in LSI circuit. A fluorocarbon (CFx) film is proposed as foreground ultra low-k film because of non-porous structure . Although CFx film is expected to be stable for its structure advantage, damage-less process is anticipated to avoid dielectric constants change in subsequence process steps . CMP and post CMP process are concerned to bring damage on devices, so the effect of post CMP cleaning solutions on CFx structure and electric property is evaluated.
Paul Mertens, Marc Meuris and Marc Heyns
X. Gu et al., "Damage-Free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced Interconnects ", Solid State Phenomena, Vols. 145-146, pp. 381-384, 2009