Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"

Lucile Broussous; W. Puyrenier; D. Rebiscoul; V. Rouessac; A. Ayral

doi:10.4028/www.scientific.net/SSP.145-146.295

Paper Titles

Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist
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Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide
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All Wet Photoresist Strip by Solvent Aerosol Spray
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Stripping of Ion Implanted Photoresist by CO₂ Cryogenic Pre-Treatment Followed by Wet Cleaning
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Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"
p.295

Photoresist Removal Using Alternative Chemistries and Pressures
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Ozone Chemistry for BEOL Resist Stripping – A Systematic Analytical Attempt to Understand the Interaction of O₃ with Modern DUV-Resists
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Design and Development of Novel Remover for Cu/Porous Low-k Interconnects
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Surface Energy and Wetting Behaviour of Plasma Etched Porous SiCOH Surfaces and Plasma Etch Residue Cleaning Solutions
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HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Porous Low-k Wet Etch in HF-Based Solutions: Focus...

Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"

Abstract:

In this study, the compatibility of "HF-Based" cleaning with porous low-k integration, and “pore-sealing” approach was investigated, and specific attention was paid to ultra low-k porosity evolution. We also tried to demonstrate if "k-recovery" could be achieved by thinning the modified surface layer in the pattern trench walls (plasma damaged layer), for 65nm and 45 nm design rules.