Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"

Abstract:

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In this study, the compatibility of "HF-Based" cleaning with porous low-k integration, and “pore-sealing” approach was investigated, and specific attention was paid to ultra low-k porosity evolution. We also tried to demonstrate if "k-recovery" could be achieved by thinning the modified surface layer in the pattern trench walls (plasma damaged layer), for 65nm and 45 nm design rules.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

295-302

DOI:

10.4028/www.scientific.net/SSP.145-146.295

Citation:

L. Broussous et al., "Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery" ", Solid State Phenomena, Vols. 145-146, pp. 295-302, 2009

Online since:

January 2009

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Price:

$35.00

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