Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist

David Dekraker; Blake Pasker; Jeffery W. Butterbaugh; Kurt K. Christenson; Thomas J. Wagener

doi:10.4028/www.scientific.net/SSP.145-146.277

Paper Titles

Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation
p.261

Shortening of Plasma Strip Process Resulting in Better Removal of Photo Resist after High Dose Implantation
p.265

Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System
p.269

Post Ion-Implant Photoresist Stripping Using Steam and Water: Pre-Treatment in a Steam Atmosphere and Steam-Water Mixed Spray
p.273

Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist
p.277

Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide
p.281

All Wet Photoresist Strip by Solvent Aerosol Spray
p.285

Stripping of Ion Implanted Photoresist by CO₂ Cryogenic Pre-Treatment Followed by Wet Cleaning
p.289

Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"
p.295

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Steam-Injected SPM Process for All-Wet Stripping...

Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist

Abstract:

Photoresist stripping in IC manufacturing has become more challenging as the number of photoresist levels has increased while at the same time allowable material loss and surface damage has decreased. Heavily implanted photoresist is especially challenging due to the dehydrogenated, amorphous carbon layer that forms on the surface [1]. To facilitate implanted photoresist removal, this layer can be attacked by physical processes such as ion bombardment as part of the common dry ashing approach. However, these physical approaches can lead to surface damage and increased material loss. Another approach is to increase the reactivity of the sulfuric acid – hydrogen peroxide mixture (SPM), so that it can penetrate and dissolve the amorphous carbon layer and achieve complete photoresist removal.