Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation
Photoresist stripping after ion implantation at high dosages (>1E15 atoms/cm2) is the most challenging dry strip process for advanced logic devices. Such high-dose implant stripping (HDIS) frequently leaves residues on the wafers after dry strip, unless fluorine chemistries are employed in the stripping plasma. Silicon loss requirements at sub-45nm nodes generally preclude such aggressive stripping chemistries. Instead, a wet clean is used to remove residues. However, the nature of the residues is not well understood, and are believed to usually contain some of the cross-linked, carbonized organic polymer formed in the implant . In this paper we present chemical and mechanical data on HDIS residues produced from oxidizing and reducing chemistry strip processes.
Paul Mertens, Marc Meuris and Marc Heyns
A. V. Kadavanich et al., "Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation", Solid State Phenomena, Vols. 145-146, pp. 261-264, 2009