Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation

Abstract:

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Photoresist stripping after ion implantation at high dosages (>1E15 atoms/cm2) is the most challenging dry strip process for advanced logic devices. Such high-dose implant stripping (HDIS) frequently leaves residues on the wafers after dry strip, unless fluorine chemistries are employed in the stripping plasma. Silicon loss requirements at sub-45nm nodes generally preclude such aggressive stripping chemistries. Instead, a wet clean is used to remove residues. However, the nature of the residues is not well understood, and are believed to usually contain some of the cross-linked, carbonized organic polymer formed in the implant [1]. In this paper we present chemical and mechanical data on HDIS residues produced from oxidizing and reducing chemistry strip processes.

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

261-264

DOI:

10.4028/www.scientific.net/SSP.145-146.261

Citation:

A. V. Kadavanich et al., "Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation", Solid State Phenomena, Vols. 145-146, pp. 261-264, 2009

Online since:

January 2009

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Price:

$35.00

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