Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation

Andreas V. Kadavanich; Sang Hoon Shim; Harry M. Meyer; Stephen E. Savas; Edgar Lara-Curzio

doi:10.4028/www.scientific.net/SSP.145-146.261

Paper Titles

Material Loss Impact on Device Performance for 32nm CMOS and Beyond
p.245

Evaluation of Plasma Strip Induced Substrate Damage
p.249

Post Extension Ion Implant Photo Resist Strip for 32 nm Technology and beyond
p.253

Influence of Dry Ashing and Wet Treatments on NVM Metal Gate Structures
p.257

Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation
p.261

Shortening of Plasma Strip Process Resulting in Better Removal of Photo Resist after High Dose Implantation
p.265

Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System
p.269

Post Ion-Implant Photoresist Stripping Using Steam and Water: Pre-Treatment in a Steam Atmosphere and Steam-Water Mixed Spray
p.273

Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist
p.277

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Chemical and Mechanical Analysis of HDIS Residues...

Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation

Abstract:

Photoresist stripping after ion implantation at high dosages (>1E15 atoms/cm2) is the most challenging dry strip process for advanced logic devices. Such high-dose implant stripping (HDIS) frequently leaves residues on the wafers after dry strip, unless fluorine chemistries are employed in the stripping plasma. Silicon loss requirements at sub-45nm nodes generally preclude such aggressive stripping chemistries. Instead, a wet clean is used to remove residues. However, the nature of the residues is not well understood, and are believed to usually contain some of the cross-linked, carbonized organic polymer formed in the implant [1]. In this paper we present chemical and mechanical data on HDIS residues produced from oxidizing and reducing chemistry strip processes.