Shortening of Plasma Strip Process Resulting in Better Removal of Photo Resist after High Dose Implantation

Andrey Zakharov; Markus Lenski; Sven Metzger; Christian Krüger

doi:10.4028/www.scientific.net/SSP.145-146.265

Paper Titles

Evaluation of Plasma Strip Induced Substrate Damage
p.249

Post Extension Ion Implant Photo Resist Strip for 32 nm Technology and beyond
p.253

Influence of Dry Ashing and Wet Treatments on NVM Metal Gate Structures
p.257

Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation
p.261

Shortening of Plasma Strip Process Resulting in Better Removal of Photo Resist after High Dose Implantation
p.265

Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System
p.269

Post Ion-Implant Photoresist Stripping Using Steam and Water: Pre-Treatment in a Steam Atmosphere and Steam-Water Mixed Spray
p.273

Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist
p.277

Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide
p.281

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146Shortening of Plasma Strip Process Resulting in...

Shortening of Plasma Strip Process Resulting in Better Removal of Photo Resist after High Dose Implantation

Abstract:

A layer of hardened material (crust) forms on the surface of photo resist (PR) during the implantation. This crust can be described as highly cross-linked polymer [1, 2]. Its thickness and composition depends on the type of PR, implant species, energy, dose, temperature during implantation and other factors. The crust is very resistant against chemical attack. Its chemical resistance tends to increase with the continuous shrink of technology nodes as implant doses increase. Moreover, even small residues of PR, left after cleaning, become more critical with shrinking device geometry. The usual process sequence for stripping a PR after high dose implantation (HDI) is a plasma strip (PS) followed by a wet clean. The drawback of plasma ashing is increased substrate loss and dopant bleach [3]. Plasma strip or plasma ash stand in this paper for the approach of complete PR consumption in the plasma process. Wet stripping alone often is not sufficient for stripping PR after implant doses of ≥ 1x1015 ions/cm2.