Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide

Eric J. Bergman; J. Dusty Leonhard

doi:10.4028/www.scientific.net/SSP.145-146.281

Paper Titles

Shortening of Plasma Strip Process Resulting in Better Removal of Photo Resist after High Dose Implantation
p.265

Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System
p.269

Post Ion-Implant Photoresist Stripping Using Steam and Water: Pre-Treatment in a Steam Atmosphere and Steam-Water Mixed Spray
p.273

Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist
p.277

Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide
p.281

All Wet Photoresist Strip by Solvent Aerosol Spray
p.285

Stripping of Ion Implanted Photoresist by CO₂ Cryogenic Pre-Treatment Followed by Wet Cleaning
p.289

Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"
p.295

Photoresist Removal Using Alternative Chemistries and Pressures
p.303

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Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide

Abstract:

Ion implantation is one of many critical processes in the fabrication of semiconductor devices. While device geometries have been shrinking, the implant dose has typically been increasing. Historically, photoresist removal has been achieved through a combination of plasma “ashing” and a subsequent wet clean, often using a mixture of sulfuric acid and hydrogen peroxide at elevated temperature. The “piranha” or SPM strip is often followed by an ammonia based clean such as APM to remove particles and sulfate residues from the device. However, device constraints are presently having difficulty accommodating the film loss, surface roughening, high molecular temperatures and hot electron injection which may accompany a plasma ash. [1] The APM clean is also having to undergo modification in order to minimize oxide loss which would adversely affect device performance.