All Wet Photoresist Strip by Solvent Aerosol Spray

Masayuki Wada; Kenichi Sano; James Snow; Rita Vos; L.H.A. Leunissens; Paul W. Mertens; Atsuro Eitoku

doi:10.4028/www.scientific.net/SSP.145-146.285

Paper Titles

Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System
p.269

Post Ion-Implant Photoresist Stripping Using Steam and Water: Pre-Treatment in a Steam Atmosphere and Steam-Water Mixed Spray
p.273

Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist
p.277

Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide
p.281

All Wet Photoresist Strip by Solvent Aerosol Spray
p.285

Stripping of Ion Implanted Photoresist by CO₂ Cryogenic Pre-Treatment Followed by Wet Cleaning
p.289

Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"
p.295

Photoresist Removal Using Alternative Chemistries and Pressures
p.303

Ozone Chemistry for BEOL Resist Stripping – A Systematic Analytical Attempt to Understand the Interaction of O₃ with Modern DUV-Resists
p.311

HomeSolid State PhenomenaSolid State Phenomena Vols. 145-146All Wet Photoresist Strip by Solvent Aerosol Spray

All Wet Photoresist Strip by Solvent Aerosol Spray

Abstract:

The introduction of metal gates and high-k dielectrics in FEOL and porous ULK dielectrics in BEOL presents severe issues [1] and leads to the requirement of new chemistries and processes. A major challenge in cleaning is the removal of photoresist (PR) in both FEOL and BEOL. In current semiconductor device fabrication flow, the photoresist strip process in FEOL is mostly achieved by applying a sequence of plasma ashing followed by a wet-clean step with sulfuric-peroxide mixture (SPM). But in general, ashing leads to strong oxidation or etching of silicon substrate. Hence, several approaches for ashless PR strip have been reported, such as hot SPM [2] and the combination of a pre-treatment using high velocity CO2 aerosol [3].