All Wet Photoresist Strip by Solvent Aerosol Spray

Abstract:

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The introduction of metal gates and high-k dielectrics in FEOL and porous ULK dielectrics in BEOL presents severe issues [1] and leads to the requirement of new chemistries and processes. A major challenge in cleaning is the removal of photoresist (PR) in both FEOL and BEOL. In current semiconductor device fabrication flow, the photoresist strip process in FEOL is mostly achieved by applying a sequence of plasma ashing followed by a wet-clean step with sulfuric-peroxide mixture (SPM). But in general, ashing leads to strong oxidation or etching of silicon substrate. Hence, several approaches for ashless PR strip have been reported, such as hot SPM [2] and the combination of a pre-treatment using high velocity CO2 aerosol [3].

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

285-288

DOI:

10.4028/www.scientific.net/SSP.145-146.285

Citation:

M. Wada et al., "All Wet Photoresist Strip by Solvent Aerosol Spray", Solid State Phenomena, Vols. 145-146, pp. 285-288, 2009

Online since:

January 2009

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Price:

$35.00

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