Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System

Y.J. Kim; J.H. Lee; K.J. Seo; C.R. Yoon; E.S. Roh; J.K. Cho; T. Hattori

doi:10.4028/www.scientific.net/SSP.145-146.269

Paper Titles

Post Extension Ion Implant Photo Resist Strip for 32 nm Technology and beyond
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Influence of Dry Ashing and Wet Treatments on NVM Metal Gate Structures
p.257

Chemical and Mechanical Analysis of HDIS Residues Using Auger Electron Spectroscopy and Nanoindentation
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Shortening of Plasma Strip Process Resulting in Better Removal of Photo Resist after High Dose Implantation
p.265

Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System
p.269

Post Ion-Implant Photoresist Stripping Using Steam and Water: Pre-Treatment in a Steam Atmosphere and Steam-Water Mixed Spray
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Steam-Injected SPM Process for All-Wet Stripping of Implanted Photoresist
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Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide
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All Wet Photoresist Strip by Solvent Aerosol Spray
p.285

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Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System

Abstract:

Stripping high-dose ion-implanted (HDI) photoresists is considered as one of the most challengeable processes in the semiconductor manufacturing due to the difficulty of both removing crust (or carbonized layer) formed during the ion implantation and preventing the silicon recess after subsequent cleaning. The HDI photoresists are conventionally removed by using a two-step process, low-pressure plasma ashing in a single-wafer tool followed by SPM-based wet stripping in a batch immersion tool. Alternative HDI-resist strip methods have been proposed, such as a combination of physical-force pretreatments followed by more traditional wet cleaning steps [1], a SPM-based all-wet process at extremely high temperature (≥ 200°C) [2], and supercritical CO2 combined with chemical additive formulations [3].