Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System

Abstract:

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Stripping high-dose ion-implanted (HDI) photoresists is considered as one of the most challengeable processes in the semiconductor manufacturing due to the difficulty of both removing crust (or carbonized layer) formed during the ion implantation and preventing the silicon recess after subsequent cleaning. The HDI photoresists are conventionally removed by using a two-step process, low-pressure plasma ashing in a single-wafer tool followed by SPM-based wet stripping in a batch immersion tool. Alternative HDI-resist strip methods have been proposed, such as a combination of physical-force pretreatments followed by more traditional wet cleaning steps [1], a SPM-based all-wet process at extremely high temperature (≥ 200°C) [2], and supercritical CO2 combined with chemical additive formulations [3].

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

269-272

DOI:

10.4028/www.scientific.net/SSP.145-146.269

Citation:

Y.J. Kim et al., "Stripping and Cleaning of High-Dose Ion-Implanted Photoresists Using a Single-Wafer, Single-Chamber Dry/Wet Hybrid System ", Solid State Phenomena, Vols. 145-146, pp. 269-272, 2009

Online since:

January 2009

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Price:

$35.00

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