S-Passivation of the Ge Gate Stack Using (NH4)2S

Sonja Sioncke; Claudia Fleischmann; Dennis Lin; Evi Vrancken; Matty Caymax; Marc Meuris; Kristiaan Temst; André Vantomme; Matthias Müller; Michael Kolbe; Burkhard Beckhoff

doi:10.4028/www.scientific.net/SSP.187.23

Paper Titles

Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap
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Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface
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Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers
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Cleaning and Surface Preparation for SiGe and Ge Channel Device
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S-Passivation of the Ge Gate Stack Using (NH₄)₂S
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Wet Chemical Cleaning of InP and InGaAs
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Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique
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Effect of Wet Cleanings on GST Surface: XPS Characterization
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Study of the Etching Mechanism of Heavily Doped Si in HF
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HomeSolid State PhenomenaSolid State Phenomena Vol. 187S-Passivation of the Ge Gate Stack Using (NH4)2S

S-Passivation of the Ge Gate Stack Using (NH₄)₂S

Abstract:

The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH₄)₂S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.