Effect of Wet Cleanings on GST Surface: XPS Characterization

Annamaria Votta; Francesco Pipia; Enrica Ravizza; Simona Spadoni; Silvia Rossini; Lucilla Brattico; Mauro Alessandri

doi:10.4028/www.scientific.net/SSP.187.37

Paper Titles

Cleaning and Surface Preparation for SiGe and Ge Channel Device
p.19

S-Passivation of the Ge Gate Stack Using (NH₄)₂S
p.23

Wet Chemical Cleaning of InP and InGaAs
p.27

Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique
p.33

Effect of Wet Cleanings on GST Surface: XPS Characterization
p.37

Study of the Etching Mechanism of Heavily Doped Si in HF
p.41

Study on Al₂O₃ Film in Anhydrous HF Vapor
p.45

Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory
p.49

Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate
p.53

HomeSolid State PhenomenaSolid State Phenomena Vol. 187Effect of Wet Cleanings on GST Surface: XPS...

Effect of Wet Cleanings on GST Surface: XPS Characterization

Abstract:

GST is an alloy composed by Ge, Sb, Te whose importance is increasing more and more in semiconductors manufacturing due to its usage in Phase Change Memories (PCM) architecture, as a charge storage element. As a consequence its integration in PCM architectures requires a deeper understanding of the effect that commonly used wet cleanings may have on the surface of the alloy.