Cleaning and Surface Preparation for SiGe and Ge Channel Device

Abstract:

Since silicon will ultimately face physical limitations, germanium and III-V materials, such as Ga, GaAs, InGaAs, are being extensively investigated for their high electron and hole mobility advantages. Prior to implementing germanium or III-V materials, it is believed that SiGe with high Ge concentration will be applied for channel materials in pMOS devices with high-k and metal gates in order to simultaneously adjust the work function and to increase the hole mobility. However, introduction of new channel materials leads to new challenges and substantial changes in the FEOL process flow.

• Periodical: Solid State Phenomena (Volume 187)
• Pages: 19-22
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.187.19
• Online since: April 2012
• Authors: Masayuki Wada, H. Takahashi, James Snow, Rita Vos, Thierry Conard, Paul W. Mertens, H. Shirakawa
• Keywords: Etch Rate, FTIR-ATR, Ge, SiGe, XPS

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[55] 02.

[5] 31.

78.

[1] 41.

[3] 4.

[26] 41 APM (1: 4: 20), 65C, 45s.

[59] 56.

[2] 04 < DL.

4.

[1] 82.

[29] 44 O3 10ppm, 30s.

[42] 19.

[14] 86.

[3] 88.

[2] 21.

[9] 92.

[14] 34 HFHCl (1: 10: 70, RT).

[24] 06.

[27] 69.

[7] 41.

[3] 01.

[15] 08.

[3] 76 APM 45s APM 30s APM 15s UV/O3 10ppm O3 HF Figure 4: Transmission absorption IR spectra of Si0. 45Ge0. 55 surface after different treatments (1/4/20 APM at 65°C, 10ppm O3 water, HF 2%). Figure 5: Ge3d and Si2p XPS spectra taken at 78 deg measurement angle of Si0. 45Ge0. 55 surface after different treatments (1/4/20 APM at 65°C for 15 and 45s, 10ppm O3 water, 1/10/70 HF/HCl/H2O). APM HF/HCl (b) Si2p (a) Ge3d APM 45sec APM 15sec 10ppm O3 HF/HCl.

DOI: 10.7554/elife.45472.007