Preface, Committees and Sponsors
Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap
p.3
p.3
Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface
p.9
p.9
Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers
p.15
p.15
Cleaning and Surface Preparation for SiGe and Ge Channel Device
p.19
p.19
S-Passivation of the Ge Gate Stack Using (NH4)2S
p.23
p.23
Wet Chemical Cleaning of InP and InGaAs
p.27
p.27
Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique
p.33
p.33
Effect of Wet Cleanings on GST Surface: XPS Characterization
p.37
p.37
Preface, Committees and Sponsors
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volume 187)
Online since:
April 2012
Сopyright:
© 2012 Trans Tech Publications Ltd. All Rights Reserved
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