Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface

W. Melitz; J.B. Clemens; J. Shen; E.A. Chagarov; S. Lee; J.S. Lee; J.E. Royer; M. Holland; S. Bentley; D. McIntyre; I. Thayne; R. Droopad; A.C. Kummel

doi:10.4028/www.scientific.net/SSP.187.9

Paper Titles

Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap
p.3

Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface
p.9

Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers
p.15

Cleaning and Surface Preparation for SiGe and Ge Channel Device
p.19

S-Passivation of the Ge Gate Stack Using (NH₄)₂S
p.23

Wet Chemical Cleaning of InP and InGaAs
p.27

Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique
p.33

Effect of Wet Cleanings on GST Surface: XPS Characterization
p.37

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Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface

Abstract:

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.