Wet Chemical Cleaning of InP and InGaAs

Rita Vos; Sophia Arnauts; Thierry Conard; Alain Moussa; Herbert Struyf; Paul W. Mertens

doi:10.4028/www.scientific.net/SSP.187.27

Paper Titles

Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface
p.9

Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers
p.15

Cleaning and Surface Preparation for SiGe and Ge Channel Device
p.19

S-Passivation of the Ge Gate Stack Using (NH₄)₂S
p.23

Wet Chemical Cleaning of InP and InGaAs
p.27

Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique
p.33

Effect of Wet Cleanings on GST Surface: XPS Characterization
p.37

Study of the Etching Mechanism of Heavily Doped Si in HF
p.41

Study on Al₂O₃ Film in Anhydrous HF Vapor
p.45

HomeSolid State PhenomenaSolid State Phenomena Vol. 187Wet Chemical Cleaning of InP and InGaAs

Wet Chemical Cleaning of InP and InGaAs

Abstract:

In this work, the compatibility of InP and InGaAs in cleaning solutions commonly used in semiconductor manufacturing is investigated. Aqueous oxidizing cleans should be avoided as the substrates dissolve rapidly. Low pH solutions may impose some serious ES&H issues due to hydride evolution occurring upon acidic hydrolysis of the III-V material. However, acidic solutions are very efficient to remove the native oxide from the substrate. Complete oxide free surfaces are not achieved after wet cleaning due to the rapid oxidation of these materials in the atmosphere.

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Periodical:

Solid State Phenomena (Volume 187)

Pages:

27-31

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.187.27

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Online since:

April 2012

Authors:

Rita Vos, Sophia Arnauts, Thierry Conard, Alain Moussa, Herbert Struyf, Paul W. Mertens

Keywords:

Etching, III-V Substrate, InGaAs, InP, Passivation

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