Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Patrick Berwian; Daniel Kaminzky; Katharina Rosshirt; Birgit Kallinger; Jochen Friedrich; Steffen Oppel; Adrian Schneider; Michael Schütz

doi:10.4028/www.scientific.net/SSP.242.484

Paper Titles

Electrical Characterization of Defects Introduced in n-Type N-Doped 4H-SiC during Electron Beam Exposure
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A New Approach for Calculating the Band Gap of Semiconductors within the Density Functional Method
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Ab Initio Study of MgSe Self-Interstitial (Mg_i and Se_i)
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Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices
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Capacitance Transient Spectroscopy Measurements on High-k Metal Gate Field Effect Transistors Fabricated Using 28nm Technology Node
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Comparative Investigations of the Surface Damage of Monocrystalline Silicon Wafers by Scanning Infrared Reflection Examination and Raman Spectroscopy
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Non-Visual Defect Monitoring with Surface Voltage Mapping: Application for Semiconductor IC and PV Technology
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Comparative Spatially Resolved Characterization of a Czochralski-Grown Silicon Crystal by Different Laser-Based Imaging Techniques
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Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence
p.484

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Imaging Defect Luminescence of 4H-SiC by...

Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Abstract:

A new tool for characterizing extended defects in Silicon Carbide (SiC) based on photoluminescence imaging is presented. In contrast to other techniques like Defect Selective Etching (DSE) or X-ray topography this technique is both fast and non-destructive. It is shown that several defect types, especially those relevant for the performance of electronic devices on SiC (i.e. Stacking Faults and Basal Plane Dislocations) can be investigated. The tool is therefore usable in research and development for a quick feedback on process related defect generation as well as in a production environment for quality control.

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Periodical:

Solid State Phenomena (Volume 242)

Pages:

484-489

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.484

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Online since:

October 2015

Authors:

Patrick Berwian*, Daniel Kaminzky, Katharina Rosshirt, Birgit Kallinger, Jochen Friedrich, Steffen Oppel, Adrian Schneider, Michael Schütz

Keywords:

Defects, Imaging, Map, Photoluminescence, Silicon Carbide (SiC)

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References

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