Metrology for High Selective Silicon Nitride Etch

Chuan Nan Bai; Guang Liang; Eugene Shalyt

doi:10.4028/www.scientific.net/SSP.255.81

Paper Titles

Comparison of the Chemical Passivation of GaAs, In_0.53Ga_0.47As, and InSb with 1-Eicosanethiol
p.55

Digital Etching of GaAs Materials: Comparison of Oxidation Treatments
p.61

Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation
p.69

Selective Etching of Silicon Oxide versus Nitride with Low Oxide Etching Rate
p.75

Metrology for High Selective Silicon Nitride Etch
p.81

Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF₃ and H₂O
p.86

Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL
p.91

Analysis of Si Wet Etching Effect on Wafer Edge
p.97

Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing
p.105

HomeSolid State PhenomenaSolid State Phenomena Vol. 255Metrology for High Selective Silicon Nitride Etch

Metrology for High Selective Silicon Nitride Etch

Abstract:

This paper demonstrates a variety of metrology methods for high selective silicon nitride etch in different process baths. Capability of measuring full matrix components is also presented. For the measurement of H₃PO₄and H₂O, both NIR spectroscopy and conductivity methods work well. Si measurement in the etchant that contains an organo-silicon compound requires a new reagent development in comparison with the original reagent method developed for regular process contains inorganic Si only.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

81-85

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.81

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Online since:

September 2016

Authors:

Chuan Nan Bai, Guang Liang, Eugene Shalyt*

Keywords:

Low Temperature Etching, Metrology, Near Infrared (NIR), Organo-Silicon, Phosphoric Acid, Selectivity, Silicon Nitride Etch

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References

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