Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL

Hsing Chen Wu; Sheng Hung Tu; Min Chieh Yang; Emanuel Cooper

doi:10.4028/www.scientific.net/SSP.255.91

Paper Titles

Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation
p.69

Selective Etching of Silicon Oxide versus Nitride with Low Oxide Etching Rate
p.75

Metrology for High Selective Silicon Nitride Etch
p.81

Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF₃ and H₂O
p.86

Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL
p.91

Analysis of Si Wet Etching Effect on Wafer Edge
p.97

Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing
p.105

Characterization and Development of High Dose Implanted Resist Stripping Processes
p.111

Chemical Infiltration through Deep UV Photoresist
p.117

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Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL

Abstract:

This paper describes etching of titanium nitride (TiN) highly selective to tungsten (W), where the TiN etch rate (E/R) was about 100 Å/min and W E/R was less than 1 Å/min at 60°C. The formulation concept was adapted from the Entegris TK-10 series, but it was modified to fit the criteria for front-end application. No damage to tantalum nitride (TaN) was required during the etching process but silicon oxide compatibility requirement was relaxed. By replacing W inhibitors with more suitable ones, W loss was well controlled, while the particle issue previously found in the scale up lots was also solved.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

91-96

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.91

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Online since:

September 2016

Authors:

Hsing Chen Wu*, Sheng Hung Tu, Min Chieh Yang, Emanuel Cooper

Keywords:

Hard Mask, Selective Etching, Titanium Nitride, Tungsten

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* - Corresponding Author

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