Chemical Infiltration through Deep UV Photoresist

Philippe Garnier; Marc Neyens

doi:10.4028/www.scientific.net/SSP.255.117

Paper Titles

Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL
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Analysis of Si Wet Etching Effect on Wafer Edge
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Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing
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Characterization and Development of High Dose Implanted Resist Stripping Processes
p.111

Chemical Infiltration through Deep UV Photoresist
p.117

Efficient Photoresist Residue Removal with 172nm Excimer Radiation
p.122

Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry
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Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study
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Influence of CO₂ Gas Atmosphere on the Liquid Filling of Superhydrophobic Nanostructures
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HomeSolid State PhenomenaSolid State Phenomena Vol. 255Chemical Infiltration through Deep UV Photoresist

Chemical Infiltration through Deep UV Photoresist

Abstract:

Still nowadays in integrated circuits manufacturing, few materials patterns are defined by a wet etch on patterned deep UV photoresist. From dies to dies generation, an optical performance improvement is required, hence an evolution with thinner and thinner positive resist. This makes these latter more sensitive to wet chemical etchant through the polymer, reducing their protection of the underneath material. Following characterizations enable a clear understanding of BHF (Buffered HF) benefits versus diluted HF during a gate oxide definition.

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Periodical:

Solid State Phenomena (Volume 255)

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117-121

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https://doi.org/10.4028/www.scientific.net/SSP.255.117

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Online since:

September 2016

Authors:

Philippe Garnier*, Marc Neyens

Keywords:

248nm Deep UV Resist, BHF, BOE, HF, PALS, Resist Free Volume, Resist Lift Off

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