Characterization and Development of High Dose Implanted Resist Stripping Processes

Marion Croisy; Cécile Jenny; Claire Richard; Denis Guiheux; Alain Campo; Erwine Pargon; Nicolas Possémé

doi:10.4028/www.scientific.net/SSP.255.111

Paper Titles

Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF₃ and H₂O
p.86

Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL
p.91

Analysis of Si Wet Etching Effect on Wafer Edge
p.97

Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing
p.105

Characterization and Development of High Dose Implanted Resist Stripping Processes
p.111

Chemical Infiltration through Deep UV Photoresist
p.117

Efficient Photoresist Residue Removal with 172nm Excimer Radiation
p.122

Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry
p.129

Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study
p.136

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Characterization and Development of High Dose Implanted Resist Stripping Processes

Abstract:

With the increase of implantation dose in new technologies, implanted photoresist stripping is even more challenged in terms of efficiency and substrate consumption. In this work, the effect of implantation parameters (energy and implanted specie) on the photoresist modifications are studied and several plasma chemistries are evaluated to remove it. A good removal efficiency with a low substrate consumption has been found with H₂-based processes especially N₂H₂.