Efficient Photoresist Residue Removal with 172nm Excimer Radiation

Andreas Schäfert; Hartwig Wiesmann

doi:10.4028/www.scientific.net/SSP.255.122

Paper Titles

Analysis of Si Wet Etching Effect on Wafer Edge
p.97

Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing
p.105

Characterization and Development of High Dose Implanted Resist Stripping Processes
p.111

Chemical Infiltration through Deep UV Photoresist
p.117

Efficient Photoresist Residue Removal with 172nm Excimer Radiation
p.122

Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry
p.129

Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study
p.136

Influence of CO₂ Gas Atmosphere on the Liquid Filling of Superhydrophobic Nanostructures
p.141

Some Critical Issues in Pattern Collapse Prevention and Repair
p.147

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Efficient Photoresist Residue Removal with 172nm Excimer Radiation

Abstract:

The publication reviews the technique of photoresist residue removal with 172nm excimer radiation. The emission principle of excimer lamps is explained as well as the multi-step cleaning mechanism with vacuum UV radiation (VUV cleaning). Based on this principle, the effect on actual photoresist molecules of wafer cleaning applications is shown. The removal rate for typical resists is plotted as a function of dose as well the SEM picture of a wafer before and after the treatment is presented. As a conclusion, the chances and possible limitations for the usage of this technique are presented.