Some Critical Issues in Pattern Collapse Prevention and Repair

Xiu Mei Xu; Nandi Vrancken; Guy Vereecke; Samuel Suhard; Geoffrey Pourtois; Frank Holsteyns

doi:10.4028/www.scientific.net/SSP.255.147

Paper Titles

Efficient Photoresist Residue Removal with 172nm Excimer Radiation
p.122

Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry
p.129

Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study
p.136

Influence of CO₂ Gas Atmosphere on the Liquid Filling of Superhydrophobic Nanostructures
p.141

Some Critical Issues in Pattern Collapse Prevention and Repair
p.147

Watermark-Free and Efficient Spray Clean on Hydrophobic Surface with Single-Wafer Technology
p.152

Extended-Nanofluidic Devices and the Unique Liquid Properties - Invited Paper
p.157

Measurement of the Frictional Force between PVA Roller Brushes and Semiconductor Wafers with Various Films Immersed in Chemicals
p.163

Removal of Bull’s Eye Signature by Optimizing Wet Cleans Recipe
p.168

HomeSolid State PhenomenaSolid State Phenomena Vol. 255Some Critical Issues in Pattern Collapse...

Some Critical Issues in Pattern Collapse Prevention and Repair

Abstract:

In semiconductor fabrication, pattern collapse of high aspect ratio structures after wet processing is a major problem that could reduce production yield. In this work, several critical issues which limit our understanding of pattern collapse phenomenon are discussed together with some recent results of experiment and modeling. Special efforts have been put to update some of the most recent developments in characterization techniques.

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Solid State Phenomena (Volume 255)

Pages:

147-151

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.147

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Online since:

September 2016

Authors:

Xiu Mei Xu*, Nandi Vrancken, Guy Vereecke, Samuel Suhard, Geoffrey Pourtois, Frank Holsteyns

Keywords:

High Aspect Ratio (HAR) Structures, Molecular Dynamics (MD) Simulations, Pattern Collapse, Structural Strength

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