Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study

Nandi Vrancken; Guy Vereecke; Stef Bal; Stefanie Sergeant; Geert Doumen; Frank Holsteyns; Herman Terryn; Stefan de Gendt; Xiu Mei Xu

doi:10.4028/www.scientific.net/SSP.255.136

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HomeSolid State PhenomenaSolid State Phenomena Vol. 255Pattern Collapse of High-Aspect-Ratio Silicon...

Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study

Abstract:

This work focuses on capillary-induced collapse of high-aspect-ratio silicon nanopillars. Modification of the surface chemistry is demonstrated to be an efficient approach for reducing capillary forces and consequently reduce pattern collapse. Special effort is spent on determination of the wetting state of chemically modified surfaces as complete structure wetting is of utmost importance in wet processing. In light of this, an ATR-FTIR based method has been developed to unambiguously distinguish between wetting and non-wetting states.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

136-140

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.136

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Online since:

September 2016

Authors:

Nandi Vrancken, Guy Vereecke, Stef Bal, Stefanie Sergeant, Geert Doumen, Frank Holsteyns, Herman Terryn, Stefan de Gendt, Xiu Mei Xu*

Keywords:

ATR-FTIR, Cassie-Baxter, Contact Angle, High Aspect Ratio (HAR) Structures, Pattern Collapse, Surface Modification, Wenzel, Wetting

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* - Corresponding Author

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