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HomeSolid State PhenomenaSolid State Phenomena Vol. 255Deep Trench Isolation and through Silicon via...

Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry

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Abstract:

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are detectable with this method. Filling time of TSV structures has also been measured.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

129-135

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.129

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Online since:

September 2016

Authors:

C. Virgilio*, Lucile Broussous, Philippe Garnier, J. Carlier, P. Campistron, V. Thomy, M. Toubal, Pascal Besson, L. Gabette, B. Nongaillard

Keywords:

Acoustic Reflectometry, Deep Trench Isolation, High Aspect Ratio, Through Silicon via, Wetting Kinetics

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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