Analysis of Si Wet Etching Effect on Wafer Edge

Suguru Saito; Atsushi Okuyama; Kenji Takeo; Yoshiya Hagimoto; Hayato Iwamoto

doi:10.4028/www.scientific.net/SSP.255.97

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HomeSolid State PhenomenaSolid State Phenomena Vol. 255Analysis of Si Wet Etching Effect on Wafer Edge

Analysis of Si Wet Etching Effect on Wafer Edge

Abstract:

We investigated the effect of Si wet etching on the vertical step at wafer edge. We found that the concave-convex shape appeared at the wafer edge after Si etching by the Atomic Force Microscopy analysis. From the liquid simulation and the detailed evaluation of Si etching rate, we revealed that the concave-convex shape was formed by the distribution of the fluid velocity at the wafer edge.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

97-101

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.97

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Online since:

September 2016

Authors:

Suguru Saito*, Atsushi Okuyama, Kenji Takeo, Yoshiya Hagimoto, Hayato Iwamoto

Keywords:

Back-Grinding, Concave-Convex Shape, Etching Rate, Fluid Velocity, HF/HNO₃, Liquid Simulation, Stress Relief, Vertical Step, Wafer Edge, Wet Etching

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References

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