Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF3 and H2O

Sung Min Kang; Tae Hyung Kim; Taesung Kim

doi:10.4028/www.scientific.net/SSP.255.86

Paper Titles

Digital Etching of GaAs Materials: Comparison of Oxidation Treatments
p.61

Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation
p.69

Selective Etching of Silicon Oxide versus Nitride with Low Oxide Etching Rate
p.75

Metrology for High Selective Silicon Nitride Etch
p.81

Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF₃ and H₂O
p.86

Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL
p.91

Analysis of Si Wet Etching Effect on Wafer Edge
p.97

Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing
p.105

Characterization and Development of High Dose Implanted Resist Stripping Processes
p.111

HomeSolid State PhenomenaSolid State Phenomena Vol. 255Study on the Etching Selectivity of Oxide Films in...

Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF₃ and H₂O

Abstract:

Dry cleaning process has been limited to particular field of removing native oxide because it has low etching selectivity for various oxide films. To increase etching selectivity, we added H₂O steam feeding step before NF₃ feeding step. From the experimental, we can change selectivity between oxide films from tens to hundreds.

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces XIII

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 255)

Pages:

86-90

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.86

Citation:

Cite this paper

Online since:

September 2016

Authors:

Sung Min Kang, Tae Hyung Kim, Taesung Kim*

Keywords:

Cleaning, Dry Cleaning, HF-Solution, NF₃+H₂O Dry Cleaning, NF₃-Based Gas Cleaning, Oxide Film Etching, Selectivity

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] S. Farshid Chini, Alidad Amirfazli, J. Micro/Nanolith. MEMS MOEMS, 11 (3), (2012). p.033003.

Google Scholar

[2] G. Liu, J. Zhou, Y. Xiong, X. Zhang and Y. Tian, Nanotech., 22, 30, (2011).

Google Scholar

[3] T. Hattori, ECS Trans, 25 (5) (2009), pp.3-14.

Google Scholar

[4] J. Hwang, J. Seo, Y. Lee, S. Park, J. Leem, J. Kim, T. Hong, S. Jeong, K. Lee, H. Heo, H. Lee, P. Jang, K. Park, M. Lee, S. Baik, J. Kim, H. Kang, M. Jang, J. Lee, G. Cho, J. Lee, B. Lee, H. Jang, S. Park, J. Kim, S. Lee, S. Aritome, S. Hong and S. Park, IEEE International Electron Devices Meeting (IEDM), (2011).

DOI: 10.1109/iedm.2011.6131518

Google Scholar

[5] H. J. Oha, J. H. Lee, ECS Trans. 61 (2014), pp.1-8.

Google Scholar

[6] T. Hayashi, J. Nanomed. Nanotechol, S: 15, (2013), p.001.

Google Scholar

[7] C. Zhang, G. Hatipoglu and S. Tadigadapa, J. Microelectromech. S, 24, (2015).

Google Scholar