Low-Temperature Sintering of Porous Silicon Carbide Ceramics with H₃PO₄ as an Additive

Abstract:

In this paper, the raw SiC powder is oxidized at high temperature (1000 °C for 4h), and a layer of SiO₂ oxide film is formed on the surface of SiC particles. By adding phosphoric acid, phosphoric acid reacts with SiO₂ at lower temperatures to form phosphate. Phosphate decomposition produces gas to create pores. At 1200 °C, the phosphate is completely decomposed into SiO₂, and a large amount of gas is produced to prepare porous SiC ceramic with high porosity and high strength. The effects of H₃PO₄ content on the phase composition, microstructure, porosity and mechanical properties of the prepared porous SiC ceramic were investigated. With the increase of H₃PO₄ content, the porosity increased and the bending strength decreased. The results suggest that at the sintering temperature of 1200 °C, the porosity of the samples can reach 58.3%~71.2%, while the bending strength of them can reach 8.72~31.09 MPa.

• Periodical: Solid State Phenomena (Volume 281)
• Pages: 311-315
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.281.311
• Online since: August 2018
• Authors: Tian Gu, Fei Chen*, Hai Long Yuan, Qiang Shen, Lian Meng Zhang
• Keywords: Bending Strength, Porosity, SiC Ceramic, Sintering

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