Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process

Tatsuhiko Koide; Shinsuke Kimura; Takashi Kobayashi; Hiroyasu Iimori; Sugita Tomohiko; Katsuhiro Sato; Yoshihiro Ogawa

doi:10.4028/www.scientific.net/SSP.282.168

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Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach
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Drying Stability and Critical Height of Repeating Line/Space Structures
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Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process
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Exploring Wetting Dynamics on Superhydrophobic Nanopatterned Surfaces Using ATR-FTIR
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Effect of 1-D Nano-Confinement on the Kinetics of a Click-Chemistry Surface Reaction Used in Biosensors
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Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process

Abstract:

Recently, a surface energy reduction process (SERP) for stiction-free drying is used for a high aspect pattern structure like shallow trench isolation (STI). The key technology of SERP is trimethylsilyl (TMS) groups termination of the device surface. To explain the electrical influence of TMS groups was found acceptable by measuring the planar capacitor flat-band voltage shift, and the threshold voltage characteristics of 1x-nm node MOS transistors.