Wet Etchants Penetration through Photoresist during Wet Patterning

Philippe Garnier

doi:10.4028/www.scientific.net/SSP.282.141

Paper Titles

A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks
p.113

Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues
p.121

Low Temperature SiGe Steam Oxide - Aqueous Hf and NH₃/NF₃ Remote Plasma Etching and its Implementation as Si GAA Inner Spacer
p.126

RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films
p.132

Wet Etchants Penetration through Photoresist during Wet Patterning
p.141

Is Highly Selective Si₃N₄/SiO₂ Etching Feasible without Phosphoric Acid?
p.147

Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach
p.152

Drying Stability and Critical Height of Repeating Line/Space Structures
p.161

Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process
p.168

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Wet Etchants Penetration through Photoresist during Wet Patterning

Abstract:

Wet etchant infiltration through photo sensitive resists have been studied with new methodology. This latter enables a very quick response to select wet etchant / polymer compatibility to protect underneath film from being degraded.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

141-146

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.141

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Online since:

August 2018

Authors:

Philippe Garnier*

Keywords:

C(V), Chemical Infiltration through Resist, Resist Lift Off, Wet Patterning

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