A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks

Clement Porret; Anurag Vohra; Farid Sebaai; Bastien Douhard; Andriy Hikavyy; Roger Loo

doi:10.4028/www.scientific.net/SSP.282.113

Paper Titles

Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions
p.88

Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology
p.94

Selective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETs
p.101

SiGe vs. Si Selective Wet Etching for Si Gate-all-Around
p.107

A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks
p.113

Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues
p.121

Low Temperature SiGe Steam Oxide - Aqueous Hf and NH₃/NF₃ Remote Plasma Etching and its Implementation as Si GAA Inner Spacer
p.126

RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films
p.132

Wet Etchants Penetration through Photoresist during Wet Patterning
p.141

HomeSolid State PhenomenaSolid State Phenomena Vol. 282A New Method to Fabricate Ge Nanowires: Selective...

A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks

Abstract:

A new method is proposed for the formation of Ge nanowires in a gate-all-around integration scheme. We combine the use of GeSn:P/Ge epitaxial stacks and low-temperature Cl₂ vapor-phase etching to demonstrate a high etch selectivity of GeSn:P versus Ge. The process can be combined with an in situ passivation of the Ge nanowires, which can bring several advantages in view of improved process reliability and control.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

113-118

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.113

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Online since:

August 2018

Authors:

Clement Porret*, Anurag Vohra, Farid Sebaai, Bastien Douhard, Andriy Hikavyy, Roger Loo

Keywords:

Gate-All-Around, Ge Nanowire, GeSn, High Mobility Channels, Selective Etch

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