Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology

Graniel Harne A. Abrenica; Mikhail V. Lebedev; Hy Le; Andreas Hajduk; Mathias Fingerle; Thomas Mayer; Stefan de Gendt; Dennis H. van Dorp

doi:10.4028/www.scientific.net/SSP.282.94

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HomeSolid State PhenomenaSolid State Phenomena Vol. 282Unexpected Pyramid Texturization of n-Type Ge...

Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology

Abstract:

We report on the (electro) chemical etching behavior, surface morphology and composition of n-type Ge (100) in acidic halide solutions using various analytical and spectroscopic techniques. The use of an integrated (electro) chemical etching chamber connected to X-ray photoelectron spectroscopy instrument to exclude the effect of oxygen from atmosphere is highlighted.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

94-98

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.94

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Online since:

August 2018

Authors:

Graniel Harne A. Abrenica*, Mikhail V. Lebedev, Hy Le, Andreas Hajduk, Mathias Fingerle, Thomas Mayer, Stefan de Gendt, Dennis H. van Dorp

Keywords:

Anisotropy, Etching, Germanium, Halides, Pyramid Texturization, Surface Chemistry

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