Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues

M. Cazes; Christian Pizzetti; Jérôme Daviot; Philippe Garnier; Lucile Broussous; Laurence Gabette; Pascal Besson

doi:10.4028/www.scientific.net/SSP.282.121

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Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues
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HomeSolid State PhenomenaSolid State Phenomena Vol. 282Customized Chemical Compositions Adaptable for...

Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues

Abstract:

A post-etch residue cleaning formulation, based on balancing the aggressiveness of hydrofluoric acid with its well-known residue removal properties is introduced. In a series of investigations originally motivated by the cleaning challenge provided by high-k dielectric-based residues, a formulation platform is developed that successfully cleans residues resulting from the plasma patterning of tantalum oxide and similar materials while maintaining metal and dielectric compatibility. It is further shown that the fundamental advantages of this solution can be extended to the cleaning of other, more traditional post-etch residues, with no sacrifice in compatibility, as demonstrated by measurements on blanket films and through SEM data.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

121-125

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.121

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Online since:

August 2018

Authors:

M. Cazes, Christian Pizzetti, Jérôme Daviot*, Philippe Garnier, Lucile Broussous, Laurence Gabette, Pascal Besson

Keywords:

Aluminum, Cap MIM, HfOx, High K, Interconnection, Post Etch Residues, Selective Amorphous Oxide Removal, Selective Cleaning, TaN, TaOx, ZrOx

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References

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