Is Highly Selective Si3N4/SiO2 Etching Feasible without Phosphoric Acid?

Changjin Son; Tae Hyeon Kim; Tae Gun Park; Sang Woo Lim

doi:10.4028/www.scientific.net/SSP.282.147

Paper Titles

Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues
p.121

Low Temperature SiGe Steam Oxide - Aqueous Hf and NH₃/NF₃ Remote Plasma Etching and its Implementation as Si GAA Inner Spacer
p.126

RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films
p.132

Wet Etchants Penetration through Photoresist during Wet Patterning
p.141

Is Highly Selective Si₃N₄/SiO₂ Etching Feasible without Phosphoric Acid?
p.147

Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach
p.152

Drying Stability and Critical Height of Repeating Line/Space Structures
p.161

Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process
p.168

Exploring Wetting Dynamics on Superhydrophobic Nanopatterned Surfaces Using ATR-FTIR
p.175

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Is Highly Selective Si₃N₄/SiO₂ Etching Feasible without Phosphoric Acid?

Abstract:

Si₃N₄ film could be selectively removed by a special H₃PO₄-free etchant. In order to increase Si₃N₄ etching rate and Si₃N₄/SiO₂ etch selectivity, various additives were added to H₃PO₄-free etchant. The optimization of additives into H₃PO₄-free solution, a comparable Si₃N₄ etching rate with 50 times increased Si₃N₄/SiO₂ etch selectivity was obtained as compared to the conventional H₃PO₄ process.