SiGe vs. Si Selective Wet Etching for Si Gate-all-Around

Kana Komori; Jens Rip; Yukifumi Yoshida; Kurt Wostyn; Farid Sebaai; Wen Dar Liu; Yi Chia Lee; Ryo Sekiguchi; Hans Mertens; Andriy Hikavyy; Frank Holsteyns; Naoto Horiguchi

doi:10.4028/www.scientific.net/SSP.282.107

Paper Titles

Behavior Analysis of Si Etching Process with HF/HNO₃ Mixture in Single-Spin Wafer Process
p.83

Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions
p.88

Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology
p.94

Selective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETs
p.101

SiGe vs. Si Selective Wet Etching for Si Gate-all-Around
p.107

A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks
p.113

Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues
p.121

Low Temperature SiGe Steam Oxide - Aqueous Hf and NH₃/NF₃ Remote Plasma Etching and its Implementation as Si GAA Inner Spacer
p.126

RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films
p.132

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SiGe vs. Si Selective Wet Etching for Si Gate-all-Around

Abstract:

Gate All-Around (GAA) is considered a key design feature for future CMOS technology. SiGe vs. Si selective etch is required for Si nanowire formation in GAA. It is confirmed the selective SiGe removal with commodity chemical (mixtures of hydrofluoric acid (HF), hydrogen peroxide (H2O2) and acetic acid (CH3COOH, HAc)), however the thick oxidized layer on Si NW was observed after commodity chemical process, which is indicated the significant Si NW loss. On the other hand, the formulated mixture ACT® SG-101, which is focusing on SiGe oxidizer, chemical pH, solvent polarity & corrosion inhibitor for chemical concept, was performed higher selectivity and lower Si loss than commodity chemical. The formulated mixture has also been used to form an inner spacer for cavity etch scheme and confirmed uniform cavity etch and inner spacer filling on topological test structure.