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An Observation Method of Real Contact Area during PVA Brush Scrubbing

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Abstract:

In the post CMP cleaning, the contact condition between PVA brush and surface is very important. In this study, we observed the real contact area between a brush and surface using a collimating LED light and prism. As a result, we found that the real contact area increases with increasing the brush compression. In addition, we also found that the real contact area decreases when the brush starts to move, and the brush was locally compressed due to its deformation.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

73-76

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.73

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Online since:

August 2018

Authors:

Toshiyuki Sanada*, Masanao Hanai, Akira Fukunaga, Hirokuni Hiyama

Keywords:

Brush Deformation, Friction, Post-CMP Cleaning, PVA Brush, Real Contact Area

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] J. G. Park: Proc. Int. Conf. Planarization (2016), p.48.

Google Scholar

[2] A. A. Busnaina et al.: IEEE Trans. Semicond. Manuf. 15(4) (2002), p.374.

Google Scholar

[3] K. Xu et al.: J. Vac. Sci. Technol. B23 (2005), p.2160.

Google Scholar

[4] D. Ng et al., Electrochem. Solid-State Lett. 10 (2007), H227.

Google Scholar

[5] D. Ng et al.: J. Tribology 130 (2008), 021603.

Google Scholar

[6] Y. Huang et al.: Appl. Surf. Sci. 257 (2011), p.3055.

Google Scholar

[7] J. An et al.: Jpn. J. Appl. Phys. 51, (2012) 026501.

Google Scholar

[8] A. Philipossian et al.: J. Electrochem Soc. 151 (2004), G456.

Google Scholar

[9] A. Philipossian et al.: Electrochem. Solid-State Lett. 12 (2009), H84.

Google Scholar

[10] Y. Hara et al.: ECS J. Solid State Sci. Technol. 4 (2015), P141.

Google Scholar

[11] M. Ito et al.: ECS J. Solid State Sci. Technol. 7 (2018), P201.

Google Scholar

[12] M. Hanai et al.: Proc. Int. Conf. Planarization (2017), p.288.

Google Scholar

[13] M. Ito et al.: Proc. Int. Conf. Planarization (2016), p.139.

Google Scholar

[14] T. Fujiwara et al.: Solid State Phenom., 195 (2013), p.213.

Google Scholar

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