Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent

Eunseok Oh; Sang Woo Lim

doi:10.4028/www.scientific.net/SSP.282.52

Paper Titles

Vapor-Phase Deposition of N₃-Containing Monolayers on SiO₂ and Si₃N₄ for Wafer Scale Biofunctionalization
p.31

Toward the Surface Preparation of InGaAs for the Future CMOS Integration
p.39

Effect of WET treatment on Group III-V Compound Semiconductor Surface
p.43

Nanoscale Etching of GaAs and InP in Acidic H₂O₂ Solution: A Striking Contrast in Kinetics and Surface Chemistry
p.48

Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent
p.52

Removal of CrN Contamination from EUV Mask Backside Using Dry Cleaning
p.59

Damage-Free Cleaning of Advanced Structure Using Timely Energized Bubble Oscillation Megasonic Technology
p.64

An Observation Method of Real Contact Area during PVA Brush Scrubbing
p.73

Electrostatic Discharge Control and Visualization in Spray Nozzle
p.77

HomeSolid State PhenomenaSolid State Phenomena Vol. 282Ion Implanted Photoresist Removal by Material...

Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent

Abstract:

Removal of highly ion-implanted photoresist on the trench-structured GaAs was conducted by mixtures of organic solvents with additives. The ion implanted KrF photoresist on trench-structured GaAs was completely removed at 30 °C when an additive was added to the DMSO+ acetonitrile (AcN) solution. In addition, the removal rate of the implanted photoresist could be increased in DMSO+AcN+additive solution. It was also observed that the DMSO+AcN+additive solution did not cause significant material loss on the GaAs surface during the photoresist removal process.